검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Dissolution of antiphase domain boundaries in GaAs on Si(001) via post-growth annealing Barrett CSC, Atassi A, Kennon EL, Weinrich Z, Haynes K, Bao X-Y, Martin P, Jones KS Journal of Materials Science, 54(9), 7028, 2019 |
| 2 |
Deactivation of electrically supersaturated Te-doped InGaAs grown by MOCVD Kennon EL, Orzali T, Xin Y, Vert A, Lind AG, Jones KS Journal of Materials Science, 52(18), 10879, 2017 |
| 3 |
Effect of bulk growth temperature on antiphase domain boundary annihilation rate in MOCVD-grown GaAs on Si(001) Barrett CSC, Martina TP, Bao XY, Kennon EL, Gutierrez L, Martin P, Sanchez E, Jones KS Journal of Crystal Growth, 450, 39, 2016 |