검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Room temperature implantation and activation kinetics of nitrogen and phosphorus in 4H-SiC crystals. Blanque S, Perez R, Godignon P, Mestres N, Morvan E, Kerlain A, Dua C, Brylinski C, Zielinski M, Camassel J Materials Science Forum, 457-460, 893, 2004 |
| 2 |
Effect of passivation on device stability and gate reverse characteristics on 4H-SiC MESFETs Kerlain A, Morvan E, Dua C, Caillas N, Brylinski C Materials Science Forum, 457-460, 1177, 2004 |
| 3 |
Influence of material properties on wide-bandgap microwave power device characteristics Morvan E, Kerlain A, Dua C, Brylinski C Materials Science Forum, 433-4, 731, 2002 |