화학공학소재연구정보센터
검색결과 : 10건
No. Article
1 The influence of travelling magnetic field on phosphorus distribution in n-type multi-crystalline silicon
Buchovska I, Dropka N, Kayser S, Kiessling FM
Journal of Crystal Growth, 507, 299, 2019
2 Towards graphite-free hot zone for directional solidification of silicon
Dropka N, Buchovska I, Herrmann-Geppert I, Klimm D, Kiessling FM, Degenhardt U
Journal of Crystal Growth, 492, 18, 2018
3 Defect formation in Si-crystals grown on large diameter bulk seeds by a modified FZ-method
Rost HJ, Menzel R, Siche D, Juda U, Kayser S, Kiessling FM, Sylla L, Richter T
Journal of Crystal Growth, 500, 5, 2018
4 Different nucleation approaches for production of high-performance multi-crystalline silicon ingots and solar cells
Buchovska I, Liaskovskiy O, Vlasenko T, Beringov S, Kiessling FM
Solar Energy Materials and Solar Cells, 159, 128, 2017
5 Scale up aspects of directional solidification and Czochralski silicon growth processes in traveling magnetic fields
Dropka N, Ervik T, Czupalla M, Kiessling FM
Journal of Crystal Growth, 451, 95, 2016
6 Characterization of mc-Si directionally solidified in travelling magnetic fields
Kiessling FM, Bullesfeld F, Dropka N, Frank-Rotsch C, Muller M, Rudolph P
Journal of Crystal Growth, 360, 81, 2012
7 Defect distribution in boron-reduced GaAs crystals grown by vapour-pressure-controlled Czochralski technique
Kiessling FM, Albrecht M, Irmscher K, Krause-Rehberg R, Ulrici W, Rudolph P
Journal of Crystal Growth, 310(7-9), 1418, 2008
8 Numerical simulation of Czochralski crystal growth under the influence of a traveling magnetic field generated by an internal heater-magnet module (HMM)
Klein O, Lechner C, Druet PE, Philip P, Sprekels J, Frank-Rotsch C, Kiessling FM, Miller W, Rehse U, Rudolph P
Journal of Crystal Growth, 310(7-9), 1523, 2008
9 Growth and characterization of GaAs crystals produced by the VCz method without boric oxide encapsulation
Rudolph P, Kiessling FM
Journal of Crystal Growth, 292(2), 532, 2006
10 Growth of GaAS crystals from Ga-rich melts by the VCz method without liquid encapsulation
Kiessling FM, Rudolph P, Neubert M, Juda U, Naumann M, Ulrici W
Journal of Crystal Growth, 269(2-4), 218, 2004