화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Minimization of electric field enhancement at electrode edge by surface high resistive layer in Ti/4H-SiC Schottky barrier diode
Ohtsuka K, Sugimoto H, Kinouchi S, Tarui Y, Imaizumi M, Takami T, Ozeki T
Materials Science Forum, 389-3, 1165, 2002
2 Planar p-n diodes fabricated by MeV-energy and high-temperature selective implantation of aluminum to 4H-SiC
Sugimoto H, Kinouchi S, Tarui Y, Imaizumi M, Ohtsuka K, Takami T, Ozeki T
Materials Science Forum, 353-356, 731, 2001