검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Metalorganic vapor phase growth of quantum well structures on thick metamorphic buffer layers grown by hydride vapor phase epitaxy Schulte KL, Garrod TJ, Kim TW, Kirch J, Ruder S, Mawst LJ, Kuech TF Journal of Crystal Growth, 370, 293, 2013 |
| 2 |
Narrow band gap GaInNAsSb material grown by metal organic vapor phase epitaxy (MOVPE) for solar cell applications Garrod TJ, Kirch J, Dudley P, Kim S, Mawst LJ, Kuech TF Journal of Crystal Growth, 315(1), 68, 2011 |
| 3 |
Effects of antimony (Sb) incorporation on MOVPE grown InAsyP1-y metamorphic buffer layers on InP substrates Kirch J, Kim TW, Konen J, Mawst LJ, Kuech TF, Kuan TS Journal of Crystal Growth, 315(1), 96, 2011 |
| 4 |
InAS(y)P(1-y) metamorphic buffer layers on InP substrates for mid-IR diode lasers Kirch J, Garrod T, Kim S, Park JH, Shin JC, Mawst LJ, Kuech TF, Song X, Babcock SE, Vurgaftman I, Meyer JR, Kuan TS Journal of Crystal Growth, 312(8), 1165, 2010 |
| 5 |
Characteristics of mid-IR-emitting deep-well quantum cascade lasers grown by MOCVD Shin JC, D'Souza M, Kirch J, Park JH, Mawst LJ, Botez D Journal of Crystal Growth, 312(8), 1379, 2010 |
| 6 |
Highly strained InAs quantum wells on InP substrates for mid-IR emission Kim S, Kirch J, Mawst L Journal of Crystal Growth, 312(8), 1388, 2010 |