화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 SiO2 to Si Selectivity Mechanisms in High-Density Fluorocarbon Plasma-Etching
Kirmse KH, Wendt AE, Disch SB, Wu JZ, Abraham IC, Meyer JA, Breun RA, Woods RC
Journal of Vacuum Science & Technology B, 14(2), 710, 1996
2 Fluorocarbon High-Density Plasmas .8. Study of the Ion Flux Composition at the Substrate in Electron-Cyclotron-Resonance Etching Processes Using Fluorocarbon Gases
Kirmse KH, Wendt AE, Oehrlein GS, Zhang Y
Journal of Vacuum Science & Technology A, 12(4), 1287, 1994