화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Effect of H-2 carrier gas on the physical properties of a GaN layer grown using Ga2O vapor and NH3
Bu Y, Imade M, Kitamoto A, Yoshimura M, Isemura M, Mori Y
Journal of Crystal Growth, 392, 1, 2014
2 Vapor-phase epitaxial growth of GaN films using Ga2O vapor and NH3
Imade M, Bu Y, Sumi T, Kitamoto A, Yoshimura M, Sasaki T, Imsemura M, Mori Y
Journal of Crystal Growth, 350(1), 56, 2012
3 Vapor-phase epitaxial growth of GaN films using Ga2O vapor and NH3 (vol 350, pg 56, 2012)
Imade M, Bu Y, Sumi T, Kitamoto A, Yoshimura M, Sasaki T, Isemura M, Mori Y
Journal of Crystal Growth, 356, 81, 2012