검색결과 : 17건
| No. | Article |
|---|---|
| 1 |
High current, common-base GaN/AlGaN heterojunction bipolar transistors Cao XA, Dang GT, Zhang AP, Ren F, Van Hove JM, Klaassen JJ, Polley CJ, Wowchak AM, Chow PP, King DJ, Abernathy CR, Pearton SJ Electrochemical and Solid State Letters, 3(3), 144, 2000 |
| 2 |
Common-base operation of GaN bipolar junction transistors Cao XA, Dang GT, Zhang AP, Ren F, Abernathy CR, Pearton SJ, Van Hove JM, Klaassen JJ, Polley CJ, Wowchack AM, Chow PP, King DJ, Chu SNG Electrochemical and Solid State Letters, 3(7), 333, 2000 |
| 3 |
Effect of N-2 discharge treatment on AlGaN/GaN high electron mobility transistor ohmic contacts using inductively coupled plasma Zhang AP, Dang GT, Ren F, Van Hove JM, Klaassen JJ, Chow PP, Cao XA, Pearton SJ Journal of Vacuum Science & Technology A, 18(4), 1149, 2000 |
| 4 |
GaN/AlGaN HBT fabrication Ren F, Han J, Hickman R, Van Hove JM, Chow PP, Klaassen JJ, LaRoche JR, Jung KB, Cho H, Cao XA, Donovan SM, Kopf RF, Wilson RG, Baca AG, Shul RJ, Zhang L, Willison CG, Abernathy CR, Pearton SJ Solid-State Electronics, 44(2), 239, 2000 |
| 5 |
GaNPN junction issues and developments Hickman R, Van Hove JM, Chow PP, Klaassen JJ, Wowchak AM, Polley CJ, King DJ, Ren F, Abernathy CR, Pearton SJ, Jung KB, Cho H, La Roche JR Solid-State Electronics, 44(2), 377, 2000 |
| 6 |
High temperature characteristics of GaN-based Heterojunction Bipolar Transistors and Bipolar Junction Transistors Cao XA, Van Hove JM, Klaassen JJ, Polley CJ, Wowchack AM, Chow PP, King DJ, Ren F, Dang G, Zhang AP, Abernathy CR, Pearton SJ Solid-State Electronics, 44(4), 649, 2000 |
| 7 |
Simulation of GaN/AlGaN heterojunction bipolar transistors: part I -npn structures Cao XA, Van Hove JM, Klaassen JJ, Polley CJ, Wowchak AM, Chow PP, King DJ, Zhang AP, Dang G, Monier C, Pearton SJ, Ren F Solid-State Electronics, 44(7), 1255, 2000 |
| 8 |
Simulation of GaN/AlGaN heterojunction bipolar transistors: part II -pnp structures Cao XA, Van Hove JM, Klaassen JJ, Polley CJ, Wowchak AM, Chow PP, King DJ, Zhang AP, Dang G, Monier C, Pearton SJ, Ren F Solid-State Electronics, 44(7), 1261, 2000 |
| 9 |
npn AlGaN/GaN heterojunction bipolar transistors and GaN bipolar junction transistors with regrown C-doped GaAs in the base regions Dang G, Luo B, Zhang AP, Cao XA, Ren F, Pearton SJ, Cho H, Hobson WS, Lopata J, van Hove JM, Klaassen JJ, Polley CJ, Wowchack AM, Chow PP, King DJ Solid-State Electronics, 44(12), 2097, 2000 |
| 10 |
A laser photolysis time-resolved Fourier transform infrared emission study of OH(X (2)Pi, v) produced in the reaction of alkyl radicals with O(P-3) Lindner J, Loomis RA, Klaassen JJ, Leone SR Journal of Chemical Physics, 108(5), 1944, 1998 |