화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 A study of MBE growth-related defects in InAs/GaSb type-II supperlattices for long wavelength infrared detectors
Klin O, Snapi N, Cohen Y, Weiss E
Journal of Crystal Growth, 425, 54, 2015
2 InAsSb-based XB(n)n bariodes grown by molecular beam epitaxy on GaAs
Weiss E, Klin O, Grossmann S, Snapi N, Lukomsky I, Aronov D, Yassen M, Berkowicz E, Glozman A, Klipstein P, Fraenkel A, Shtrichman I
Journal of Crystal Growth, 339(1), 31, 2012
3 Hydrogen and thermal deoxidations of InSb and GaSb substrates for molecular beam epitaxial growth
Weiss E, Klin O, Grossman S, Greenberg S, Klipstein PC, Akhvlediani R, Tessler R, Edrei R, Hoffman A
Journal of Vacuum Science & Technology A, 25(4), 736, 2007
4 Molecular beam epitaxy grown In1-xAlxSb/InSb structures for infrared detectors
Klin O, Klipstein PC, Jacobsohn E, Saguy E, Shtrichman I, Raizman A, Weiss E
Journal of Vacuum Science & Technology B, 24(3), 1607, 2006