검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Combined effect of bias and annealing in gamma and neutron radiation assurance tests of SiGe bipolar transistors for HEP applications Ullan M, Diez S, Lozano M, Pellegrini G, Knoll D, Heinemann B Solid-State Electronics, 56(1), 179, 2011 |
| 2 |
Genome Expansion and Gene Loss in Powdery Mildew Fungi Reveal Tradeoffs in Extreme Parasitism Spanu PD, Abbott JC, Amselem J, Burgis TA, Soanes DM, Stuber K, van Themaat EVL, Brown JKM, Butcher SA, Gurr SJ, Lebrun MH, Ridout CJ, Schulze-Lefert P, Talbot NJ, Ahmadinejad N, Ametz C, Barton GR, Benjdia M, Bidzinski P, Bindschedler LV, Both M, Brewer MT, Cadle-Davidson L, Cadle-Davidson MM, Collemare J, Cramer R, Frenkel O, Godfrey D, Harriman J, Hoede C, King BC, Klages S, Kleemann J, Knoll D, Koti PS, Kreplak J, Lopez-Ruiz FJ, Lu XL, Maekawa T, Mahanil S, Micali C, Milgroom MG, Montana G, Noir S, O'Connell RJ, Oberhaensli S, Parlange F, Pedersen C, Quesneville H, Reinhardt R, Rott M, Sacristan S, Schmidt SM, Schon M, Skamnioti P, Sommer H, Stephens A, Takahara H, Thordal-Christensen H, Vigouroux M, Wessling R, Wicker T, Panstruga R Science, 330(6010), 1543, 2010 |
| 3 |
Base doping and dopant profile control of SiGe npn and pnp HBTs Tillack B, Heinemann B, Knoll D, Rucker H, Yamamoto Y Applied Surface Science, 254(19), 6013, 2008 |
| 4 |
Implementation of a scalable VBIC model for SiGe : C HBTs Chakravorty A, Scholz RF, Knoll D, Fox A, Senapati B, Maiti CK Solid-State Electronics, 50(3), 399, 2006 |
| 5 |
Atomic layer processing for doping of SiGe Tillack B, Yuji YA, Bolze D, Heinemann B, Rucker H, Knoll D, Murota J, Mehr W Thin Solid Films, 508(1-2), 279, 2006 |
| 6 |
Comparison of the characteristic behavior of two azo dyes on temperature dependent microstructure changes in micelles and vesicles Wen SY, Knoll D, Knoll H Journal of Colloid and Interface Science, 291(1), 244, 2005 |
| 7 |
High performance SiGe : C HBTs using atomic layer base doping Tillack B, Yamamoto Y, Knoll D, Heinemann B, Schley P, Senapati B, Kruger D Applied Surface Science, 224(1-4), 55, 2004 |
| 8 |
Circuit applications of high-performance SiGe : C HBTs integrated in BiCMOS technology Winkler W, Borngraber J, Heinemann B, Rucker H, Barth R, Bauer J, Bolze D, Drews J, Ehwald KE, Grabolla T, Haak U, Hoppner W, Knoll D, Kruger D, Kuck B, Kurps R, Marschmeyer M, Richter H, Schley P, Schmidt D, Scholz R, Tillack B, Wolansky D, Wulf HE, Yamamoto Y, Zaumseil P Applied Surface Science, 224(1-4), 297, 2004 |
| 9 |
Atomic layer doping of SiGe - fundamentals and device applications Tillack B, Heinemann B, Knoll D Thin Solid Films, 369(1-2), 189, 2000 |
| 10 |
Comparison of SiGe and SiGe : C heterojunction bipolar transistors Knoll D, Heinemann B, Ehwald KE, Tillack B, Schley P, Osten HJ Thin Solid Films, 369(1-2), 342, 2000 |