| 1 |
MOCVD-grown compressively strained C-doped InxGa1-xAs1-ySby with high-ln/Sb content for very low turn-on-voltage InP-based DHBTs (vol 404, pg 172, 2014)
Hoshi T, Kashio N, Sugiyama H, Yokoyama H, Kurishima K, Ida M, Matsuzaki H, Kohtoku M, Gotoh H
Journal of Crystal Growth, 424, 80, 2015 |
| 2 |
Impact of strained GaAs spacer between InP emitter and GaAs1-ySby base on structural properties and electrical characteristics of MOCVD-grown InP/GaAs1-ySby/InP DHBTs
Hoshi T, Hashio N, Sugiyama H, Yokoyama H, Kurishima K, Ida M, Matsuzaki H, Kohtoku M
Journal of Crystal Growth, 395, 31, 2014 |
| 3 |
MOCVD-grown compressively strained C-doped InxGa1-xAs1-ySby with high-In/Sb content for very low turn-on-voltage InP-based DHBTs
Hoshi T, Kashio N, Sugiyama H, Yokoyama H, Kurishima K, Ida M, Matsuzaki H, Kohtoku M, Gotoh H
Journal of Crystal Growth, 404, 172, 2014 |
| 4 |
Electroless Plating Catalyst Performance of a Cationic Moiety Bearing Palladium Complex
Kohtoku M, Honma H, Takai O
Journal of the Electrochemical Society, 161(14), D806, 2014 |
