| 1 |
Comparison study of temperature dependent direct/indirect bandgap emissions of Ge1-x-ySixSny and Ge1-ySny grown on Ge buffered Si
Wang BG, Harris TR, Hogsed MR, Yeo YK, Ryu MY, Kouvetakis J
Thin Solid Films, 673, 63, 2019 |
| 2 |
Investigation of hydrogen inductively coupled plasma treatment effect for Ge0.938Sn0.062/Ge/Si film using photoreflectance spectroscopy
Jo HJ, Kim JS, Ryu MY, Yeo YK, Kouvetakis J
Thin Solid Films, 645, 345, 2018 |
| 3 |
Electrical characterization and deep-level transient spectroscopy of Ge0.873Si0.104Sn0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition
Wang BG, Fang ZQ, Claflin B, Look D, Kouvetakis J, Yeo YK
Thin Solid Films, 654, 77, 2018 |
| 4 |
Temperature dependence of the interband critical points of bulk Ge and strained Ge on Si
Fernando NS, Nunley TN, Ghosh A, Nelson CM, Cooke JA, Medina AA, Zollner S, Xu C, Menendez J, Kouvetakis J
Applied Surface Science, 421, 905, 2017 |
| 5 |
Observation of temperature-dependent heavy- and light-hole split direct bandgap and tensile strain from Ge0.985Sn0.015 using photoreflectance spectroscopy
Jo HJ, Kim GH, Kim JS, Ryu MY, Yeo YK, Harris TR, Kouvetakis J
Current Applied Physics, 16(1), 83, 2016 |
| 6 |
Compositional dependence of optical interband transition energies in GeSn and GeSiSn alloys
Xu C, Senaratne CL, Kouvetakis J, Menendez J
Solid-State Electronics, 110, 76, 2015 |
| 7 |
Temperature-dependent direct transition energy in Ge0.99Sn0.01 film grown on Si measured by photoreflectance spectroscopy
Jo HJ, So MG, Kim JS, Ryu MY, Yeo YK, Kouvetakis J
Thin Solid Films, 591, 295, 2015 |
| 8 |
Electrical characterization studies of p-type Ge, Ge1-ySny, and Si0.09Ge0.882Sn0.028 grown on n-Si substrates
Harris TR, Ryu MY, Yeo YK, Beeler RT, Kouvetakis J
Current Applied Physics, 14, S123, 2014 |
| 9 |
Synthesis and optical properties of Sn-rich Ge1-x - ySixSny materials and devices
Xu C, Beeler RT, Jiang LY, Gallagher JD, Favaro R, Menendez J, Kouvetakis J
Thin Solid Films, 557, 177, 2014 |
| 10 |
Rational Design of Monocrystalline (InP)(y)Ge5-2y/Ge/Si(100) Semiconductors: Synthesis and Optical Properties
Sims PE, Chizmeshya AVG, Jiang LY, Beeler RT, Poweleit CD, Gallagher J, Smith DJ, Menendez J, Kouvetakis J
Journal of the American Chemical Society, 135(33), 12388, 2013 |
