검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Growth mechanisms in semipolar (20(2)over-bar1) and nonpolar m plane (10(1)over-bar0) AlGaN/GaN structures grown by PAMBE under N-rich conditions (vol 377C, pg 184, 2013) Sawicka M, Cheze C, Turski H, Smalc-Koziorowska J, Krysko M, Kret S, Remmele T, Albrecht M, Cywinski G, Grzegory I, Skierbiszewski C Journal of Crystal Growth, 415, 176, 2015 |
| 2 |
Influence of hydrogen and TMIn on indium incorporation in MOVPE growth of InGaN layers Czernecki R, Kret S, Kempisty P, Grzanka E, Plesiewicz J, Targowski G, Grzanka S, Bilska M, Smalc-Koziorowska J, Krukowski S, Suski T, Perlin P, Leszczynski M Journal of Crystal Growth, 402, 330, 2014 |
| 3 |
Growth mode transition and relaxation of thin InGaN layers on GaN (0001) Pristovsek M, Kadir A, Meissner C, Schwaner T, Leyer M, Stellmach J, Kneissl M, Ivaldi F, Kret S Journal of Crystal Growth, 372, 65, 2013 |
| 4 |
Growth mechanisms in semipolar (2 0 (2)over-bar 1) and nonpolar m-plane (1 0 (1)over-bar 0) AlGaN/GaN structures grown by PAMBE under N-rich conditions Sawicka M, Cheze C, Turski H, Smalc-Koziorowska J, Krysko M, Kret S, Remmele T, Albrecht M, Cywinski G, Grzegory I, Skierbiszewski C Journal of Crystal Growth, 377, 184, 2013 |
| 5 |
Contribution to quantitative measurement of the In composition in GaN/InGaN multilayers Kret S, Maciejewski G, Dluzewski P, Ruterana P, Grandjean N, Damilano B Materials Chemistry and Physics, 81(2-3), 273, 2003 |
| 6 |
Finite element simulation of residual stresses in epitaxial layers Dluzewski P, Jurczak G, Maciejewski G, Kret S, Ruterana P, Nouet G Materials Science Forum, 404-7, 141, 2002 |