검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Avoidance of surface-related defects in MOVPE-grown InGaP layers Knauer A, Krispin P, Dadgar A, Weyers M Journal of Crystal Growth, 287(2), 633, 2006 |
| 2 |
Defect study of MOVPE-grown InGaP layers on GaAs Knauer A, Krispin P, Balakrishnan VR, Weyers M Journal of Crystal Growth, 272(1-4), 627, 2004 |
| 3 |
Properties of (In,Ga)(As,P)/GaAs interfaces grown under different metalorganic vapor phase epitaxy conditions Knauer A, Krispin P, Balakrishnan VR, Weyers M Journal of Crystal Growth, 248, 364, 2003 |
| 4 |
Interface properties of isotype GaAs/(In,Ga)P/GaAs heterojunctions grown by metalorganic-vapour-phase epitaxy on GaAs Krispin P, Asghar M, Knauer A, Kostial H Journal of Crystal Growth, 220(3), 220, 2000 |