검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Investigation of microwave switching 4HSiC p-i-n diodes in the 20 divided by 500 degrees C temperature range Boltovets MS, Basanets VV, Camara N, Krivutsa VA, Zekentes K Materials Science Forum, 483, 997, 2005 |
| 2 |
High-temperature (up to 773 K) operation of 6-kV 4H-SiC junction diodes Levinshtein ME, Ivanov PA, Boltovets MS, Krivutsa VA, Palmour JW, Das MK, Hull BA Solid-State Electronics, 49(7), 1228, 2005 |
| 3 |
Simulation and prototype fabrication of microwave modulators with 4H-SiC p-i-n diodes Bludov AV, Boltovets MS, Vassilevski KV, Zorenko AV, Zekentes K, Lebedev AA, Krivutsa VA Materials Science Forum, 457-460, 1089, 2004 |