검색결과 : 25건
| No. | Article |
|---|---|
| 1 |
Mask-free three-dimensional epitaxial growth of III-nitrides Rudzinski M, Zlotnik S, Wojcik M, Gaca J, Janicki L, Kudrawiec R Journal of Materials Science, 56(1), 558, 2021 |
| 2 |
Stability of the intermediate band energy position upon temperature changes in GaNP and GaNPAs Welna M, Zelazna K, Letoublon A, Cornet C, Kudrawiec R Solar Energy Materials and Solar Cells, 196, 131, 2019 |
| 3 |
Photoreflectance studies of optical transitions in GaNPAs intermediate band solar cell absorbers Zelazna K, Kudrawiec R, Luce A, Yu KM, Kuang YJ, Tu CW, Walukiewicz W Solar Energy Materials and Solar Cells, 188, 99, 2018 |
| 4 |
Contactless electroreflectance studies of the Fermi level position at the air/GaN interface: Bistable nature of the Ga-polar surface Janicki L, Gladysiewicz M, Misiewicz J, Klosek K, Sobanska M, Kempisty P, Zytkiewicz ZR, Kudrawiec R Applied Surface Science, 396, 1657, 2017 |
| 5 |
Simultaneous growth of GaN/AlGaN quantum wells on c-, a-, m-, and (20.1)-plane GaN bulk substrates obtained by the ammonothermal method: Structural studies Rudzinski M, Kudrawiec R, Patriarche G, Kucharski R, Caban P, Strupinski W Journal of Crystal Growth, 414, 87, 2015 |
| 6 |
Ammonothermal growth of GaN crystals on HVPE-GaN seeds prepared with the use of ammonothermal substrates Kucharski R, Zajac M, Puchalski A, Sochacki T, Bockowski M, Weyher JL, Iwinska M, Serafinczuk J, Kudrawiec R, Siemiatkowski Z Journal of Crystal Growth, 427, 1, 2015 |
| 7 |
Optical absorption and thermal conductivity of GaAsPN absorbers grown on GaP in view of their use in multijunction solar cells Ilahi S, Almosni S, Chouchane F, Perrin M, Zelazna K, Yacoubi N, Kudrawiec R, Rale P, Lombez L, Guillemoles JF, Durand O, Cornet C Solar Energy Materials and Solar Cells, 141, 291, 2015 |
| 8 |
Surface photovoltage and modulation spectroscopy of E- and E+ transitions in GaNAs layers Kudrawiec R, Sitarek P, Gladysiewicz M, Misiewicz J, He Y, Jin Y, Vardar G, Mintarov AM, Merz JL, Goldman RS, Yu KM, Walukiewicz W Thin Solid Films, 567, 101, 2014 |
| 9 |
Growth of GaN epilayers on c-, m-, a-, and (20.1)-plane GaN bulk substrates obtained by ammonothermal method Rudzinski M, Kudrawiec R, Janicki L, Serafinczuk J, Kucharski R, Zajac M, Misiewicz J, Doradzinski R, Dwilinski R, Strupinski W Journal of Crystal Growth, 328(1), 5, 2011 |
| 10 |
Properties and preparation of high quality, free-standing GaN substrates and study of spontaneous separation mechanism Ashraf H, Kudrawiec R, Weyher JL, Serafinczuk J, Misiewicz J, Hageman PR Journal of Crystal Growth, 312(16-17), 2398, 2010 |