화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Effects of thermal annealing on elimination of deep defects in amorphous In-Ga-Zn-O thin-film transistors
Tang HC, Ide K, Hiramatsu H, Ueda S, Ohashi N, Kumomi H, Hosono H, Kamiya T
Thin Solid Films, 614, 73, 2016
2 Mobility-and temperature-dependent device model for amorphous In-Ga-Zn-O thin-film transistors
Abe K, Sato A, Takahashi K, Kumomi H, Kamiya T, Hosono H
Thin Solid Films, 559, 40, 2014
3 Unusually Large Enhancement of Thermopower in an Electric Field Induced Two-Dimensional Electron Gas
Ohta H, Mizuno T, Zheng SJ, Kato T, Ikuhara Y, Abe K, Kumomi H, Nomura K, Hosono H
Advanced Materials, 24(6), 740, 2012
4 Operation model with carrier-density dependent mobility for amorphous In-Ga-Zn-O thin-film transistors
Abe K, Takahashi K, Sato A, Kumomi H, Nomura K, Kamiya T, Hosono H
Thin Solid Films, 520(10), 3791, 2012
5 DC sputter deposition of amorphous indium-gallium-zinc-oxide (a-IGZO) films with H2O introduction
Aoi T, Oka N, Sato Y, Hayashi R, Kumomi H, Shigesato Y
Thin Solid Films, 518(11), 3004, 2010
6 Amorphous In-Ga-Zn-O thin-film transistor with coplanar homojunction structure
Sato A, Shimada M, Abe K, Hayashi R, Kumomi H, Nomura K, Kamiya T, Hirano M, Hosono H
Thin Solid Films, 518(4), 1309, 2009
7 Amorphous oxide channel TFTs
Kumomi H, Nomura K, Kamiya T, Hosono H
Thin Solid Films, 516(7), 1516, 2008