1 |
Synthesis of Silicon Nanoparticles in Nonthermal Capacitively-Coupled Flowing Plasmas: Processes and Transport Le Picard R, Markosyan AH, Porter DH, Girshick SL, Kushner MJ Plasma Chemistry and Plasma Processing, 36(4), 941, 2016 |
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Plasma atomic layer etching using conventional plasma equipment Agarwal A, Kushner MJ Journal of Vacuum Science & Technology A, 27(1), 37, 2009 |
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Mechanisms for plasma etching of HfO2 gate stacks with Si selectivity and photoresist trimming Shoeb J, Kushner MJ Journal of Vacuum Science & Technology A, 27(6), 1289, 2009 |
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Seasoning of plasma etching reactors: Ion energy distributions to walls and real-time and run-to-run control strategies Agarwal A, Kushner MJ Journal of Vacuum Science & Technology A, 26(3), 498, 2008 |
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Modeling of magnetically enhanced capacitively coupled plasma sources: Two frequency discharges Yang Y, Kushner MJ Journal of Vacuum Science & Technology A, 25(5), 1420, 2007 |
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Scaling of hollow cathode magnetrons for ionized metal physical vapor deposition Vyas V, Kushner MJ Journal of Vacuum Science & Technology A, 24(5), 1955, 2006 |
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Effect of nonsinusoidal bias waveforms on ion energy distributions and fluorocarbon plasma etch selectivity Agarwal A, Kushner MJ Journal of Vacuum Science & Technology A, 23(5), 1440, 2005 |
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Properties of C4F8 inductively coupled plasmas. l. Studies of Ar/c-C4F8 magnetically confined plasmas for etching of SiO2 Li X, Ling L, Hua XF, Oehrlein GS, Wang YC, Vasenkov AV, Kushner MJ Journal of Vacuum Science & Technology A, 22(3), 500, 2004 |
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Properties of c-C4F8 inductively coupled plasmas. II. Plasma chemistry and reaction mechanism for modeling of Ar/c-C4F8/O-2 discharges Vasenkov AV, Li X, Oehrlein GS, Kushner MJ Journal of Vacuum Science & Technology A, 22(3), 511, 2004 |
10 |
Extraction of negative ions from pulsed electronegative inductively coupled plasmas having a radio-frequency substrate bias Subramonium P, Kushner MJ Journal of Vacuum Science & Technology A, 22(3), 534, 2004 |