| 1 |
Behavior of defects in a-plane GaN films grown by low-angle-incidence microchannel epitaxy (LAIMCE)
Kuwano N, Ryu Y, Mitsuhara M, Lin CH, Uchiyama S, Maruyama T, Suzuki Y, Naritsuka S
Journal of Crystal Growth, 401, 409, 2014 |
| 2 |
Electron microscopy analysis of dislocation behavior in HVPE-AlGaN layer grown on a stripe-patterned (0001) sapphire substrate
Kuwano N, Kugiyama Y, Nishikouri Y, Sato T, Usui A
Journal of Crystal Growth, 311(10), 3085, 2009 |
| 3 |
Influence of molybdenum bottom electrodes on crystal growth of aluminum nitride thin films
Kamohara T, Akiyama M, Kuwano N
Journal of Crystal Growth, 310(2), 345, 2008 |
| 4 |
Growth of crack-free AlGaN on selective-area-growth GaN
Miyake H, Masuda N, Ogawahara Y, Narukawa M, Hiramatsu K, Ezaki T, Kuwano N
Journal of Crystal Growth, 310(23), 4885, 2008 |
| 5 |
TEM analysis of an interface layer formed by the anti-surfactant treatment on a GaN template
Kuwano N, Hijikuro M, Hata S, Takeuchi M, Aoyagi Y
Journal of Crystal Growth, 298, 284, 2007 |
| 6 |
Influence of aluminum nitride interlayers on crystal orientation and piezoelectric property of aluminum nitride thin films prepared on titanium electrodes
Kamohara T, Akiyama M, Ueno N, Nonaka K, Kuwano N
Thin Solid Films, 515(11), 4565, 2007 |
| 7 |
Epitaxial orientation and morphology of beta-FeSi2 produced on a flat and a patterned Si(001) substrates
Itakura M, Kishikawa N, Kawashita R, Kuwano N
Thin Solid Films, 515(22), 8169, 2007 |
| 8 |
Epitaxial growth of Fe3Si/CaF2/Fe3Si magnetic tunnel junction structures on CaF2/Si(111) by molecular beam epitaxy
Kobayashi K, Suemasu T, Kuwano N, Hara D, Akinaga H
Thin Solid Films, 515(22), 8254, 2007 |
| 9 |
Characterization of metal-induced lateral crystallization of amorphous SiGe on insulating film
Itakura M, Masumori S, Ohta T, Tomokiyo Y, Kuwano N, Kanno H, Sadoh T, Miyao M
Thin Solid Films, 508(1-2), 57, 2006 |
| 10 |
Microstructure at/around interface between plasma-sprayed hydroxyapatite and Ti alloy
Kobayashi S, Kitashita K, Nakai K, Kuwano N
Materials Science Forum, 449-4, 1281, 2004 |
