검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
술폰화 반응에 의한 High impact polystyrene(HIPS) 양이온교환막의 제조 및 특성 김용태, 곽노석, 이철호, 진창수, 황택성 Korean Chemical Engineering Research, 49(2), 211, 2011 |
| 2 |
Phase and microstructure of ALD-W films deposited using B2H6 and WF6 and their effects on CVD-W growth Kim SH, Yeom SJ, Kwak N, Sohn H Journal of the Electrochemical Society, 155(2), D148, 2008 |
| 3 |
Characteristics of ALD tungsten nitride using B2H6, WF6, and NH3 and application to contact barrier layer for DRAM Kim SH, Kim JK, Lee JH, Kwak N, Kim J, Jung SH, Hong MR, Lee SH, Collins J, Sohn H Journal of the Electrochemical Society, 154(8), D435, 2007 |
| 4 |
Effects of phase of underlying W film on chemical vapor deposited-W film growth and applications to contact-plug and bit line processes for memory devices Kim SH, Kim JT, Kwak N, Kim J, Yoon TS, Sohn H Journal of Vacuum Science & Technology B, 25(5), 1574, 2007 |
| 5 |
Atomic layer deposition of low-resistivity and high-density tungsten nitride thin films using B2H6, WF6, and NH3 Kim SH, Kim JK, Kwak N, Sohn H, Kim J, Jung SH, Hong MR, Lee SH, Collins J Electrochemical and Solid State Letters, 9(3), C54, 2006 |
| 6 |
A comparative study of the atomic-layer-deposited tungsten thin films as nucleation layers for W-plug deposition Kim SH, Kwak N, Kim J, Sohn H Journal of the Electrochemical Society, 153(10), G887, 2006 |