| 1 |
Etching Kinetics and Surface Conditions for KNbxOy Thin Films with Fluorine- and Chlorine-Based Plasma Chemistries
Lim N, Efremov A, Hwang HG, Nahm S, Kwon KH
Plasma Chemistry and Plasma Processing, 40(2), 625, 2020 |
| 2 |
Plasma Parameters and Silicon Etching Kinetics in C4F8 + O-2 + Ar Gas Mixture: Effect of Component Mixing Ratios
Lee BJ, Efremov A, Nam Y, Kwon KH
Plasma Chemistry and Plasma Processing, 40(5), 1365, 2020 |
| 3 |
Study on the surface energy characteristics of polydimethylsiloxane (PDMS) films modified by C4F8/O-2/Ar plasma treatment
Kim YG, Lim N, Kim J, Kim C, Lee J, Kwon KH
Applied Surface Science, 477, 198, 2019 |
| 4 |
CFD모사기법을 이용한 가스 여과기 성능 해석
전락영, 권기현, 윤순민, 박명규, 이창하, 오민
Korean Chemical Engineering Research, 57(4), 475, 2019 |
| 5 |
Etching Kinetics and Mechanisms of SiC Thin Films in F-, Cl- and Br-Based Plasma Chemistries
Lee BJ, Efremov A, Lee J, Kwon KH
Plasma Chemistry and Plasma Processing, 39(1), 325, 2019 |
| 6 |
Peculiarities of Si and SiO2 Etching Kinetics in HBr+Cl-2+O-2 Inductively Coupled Plasma
Lee BJ, Efremov A, Kim J, Kim C, Kwon KH
Plasma Chemistry and Plasma Processing, 39(1), 339, 2019 |
| 7 |
Etching Mechanisms and Surface Conditions for SiOxNy Thin Films in CF4+CHF3+O-2 Inductively Coupled Plasma
Lee J, Kim J, Efremov A, Kim C, Lee HW, Kwon KH
Plasma Chemistry and Plasma Processing, 39(4), 1127, 2019 |
| 8 |
Sidewall chemistry of nano-contact patterns in C4F8 + CH2F2 + O-2 + Ar inductively coupled plasmas
Lee J, Kim C, Lee HW, Kwon KH
Thin Solid Films, 669, 227, 2019 |
| 9 |
Gas-phase chemistry and etching mechanism of SiNx thin films in C4F8 + Ar inductively coupled plasma
Lim N, Efremov A, Kwon KH
Thin Solid Films, 685, 97, 2019 |
| 10 |
Kinetics and mechanisms for ion-assisted etching of InP thin films in HBr + Cl-2 + Ar inductively coupled plasma with various HBr/Cl-2 mixing ratios
Kim C, Efremov A, Lee J, Han IK, Kim YH, Kwon KH
Thin Solid Films, 660, 590, 2018 |
