| 1 |
Electrically detected magnetic resonance of near-interface defects in Si pn-junction structures with LOCOS isolation
Wimbauer T, Mochizuki Y, Ito K, Horikawa M, Kitano T
Applied Surface Science, 159, 72, 2000 |
| 2 |
Local lattice strain measurements in semiconductor devices by using convergent-beam electron diffraction
Toda A, Ikarashi N, Ono H
Journal of Crystal Growth, 210(1-3), 341, 2000 |
| 3 |
Control of the slope of field oxide edge and its effects on gate oxide reliability
Jang SA, Kim YB, Yeo IS, Lee SK
Journal of the Electrochemical Society, 146(1), 270, 1999 |
| 4 |
Field oxide thinning behavior in local oxidation of silicon process under enhanced oxidation conditions
Jang SA, Yeo IS, Kim YB
Journal of the Electrochemical Society, 145(5), 1664, 1998 |
| 5 |
Submicrometer patterning of epitaxial CoSi2/Si(111) by local oxidation
Klinkhammer F, Kappius L, Mesters S
Thin Solid Films, 318(1-2), 163, 1998 |
| 6 |
Anomalous Field-Oxide-Ungrowth Phenomenon in Recessed Local Oxidation of Silicon Isolation Structure
Cho BJ, Jang SA, Kim YB, Lee DD, Kim JC
Journal of the Electrochemical Society, 144(1), 320, 1997 |
| 7 |
Oxide-Growth Effects in Micron End Submicron Field Regions - A Comparison Between Wet and Dry Oxidation
Bellutti P, Zen M
Journal of the Electrochemical Society, 143(9), 2953, 1996 |
