화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 The effect of La2O3-incorporation in HfO2 dielectrics on Ge substrate by atomic layer deposition
Oh IK, Kim MK, Lee JS, Lee CW, Lansalot-Matras C, Noh W, Park J, Noori A, Thompson D, Chu S, Maeng WJ, Kim H
Applied Surface Science, 287, 349, 2013
2 Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
Kim WH, Maeng WJ, Moon KJ, Myoung JM, Kim H
Thin Solid Films, 519(1), 362, 2010