검색결과 : 2건
No. | Article |
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1 |
The effect of La2O3-incorporation in HfO2 dielectrics on Ge substrate by atomic layer deposition Oh IK, Kim MK, Lee JS, Lee CW, Lansalot-Matras C, Noh W, Park J, Noori A, Thompson D, Chu S, Maeng WJ, Kim H Applied Surface Science, 287, 349, 2013 |
2 |
Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition Kim WH, Maeng WJ, Moon KJ, Myoung JM, Kim H Thin Solid Films, 519(1), 362, 2010 |