검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Impact of deposition and annealing temperature on material and electrical characteristics of ALD HfO2 Triyoso D, Liu R, Roan D, Ramon M, Edwards NV, Gregory R, Werho D, Kulik J, Tam G, Irwin E, Wang XD, La LB, Hobbs C, Garcia R, Baker J, White BE, Tobin P Journal of the Electrochemical Society, 151(10), F220, 2004 |
| 2 |
Film properties of ALD HfO2 and La2O3 gate dielectrics grown on Si with various pre-deposition treatments Triyoso DH, Hegde RI, Grant J, Fejes P, Liu R, Roan D, Ramon M, Werho D, Rai R, La LB, Baker J, Garza C, Guenther T, White BE, Tobin PJ Journal of Vacuum Science & Technology B, 22(4), 2121, 2004 |
| 3 |
Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics Schaeffer JK, Samavedam SB, Gilmer DC, Dhandapani V, Tobin PJ, Mogab J, Nguyen BY, White BE, Dakshina-Murthy S, Rai RS, Jiang ZX, Martin R, Raymond MV, Zavala M, La LB, Smith JA, Garcia R, Roan D, Kottke M, Gregory RB Journal of Vacuum Science & Technology B, 21(1), 11, 2003 |