| 1 |
Enhancement of light extraction efficiency in sub-300 nm nitride thin-film flip-chip light-emitting diodes
Lachab M, Asif F, Zhang B, Ahmad I, Heidari A, Fareed Q, Adivarahan V, Khan A
Solid-State Electronics, 89, 156, 2013 |
| 2 |
MBE growth and transport properties of silicon delta-doped GaAs/AlAs quantum well structures for terahertz frequency detection
Lachab M, Khanna SP, Harrison P, Linfield EH, Cerskus A, Kundrotas J, Seliuta D, Valusis G
Journal of Crystal Growth, 312(10), 1761, 2010 |
| 3 |
Optical probe of InAs/GaAs self-assembled quantum dots grown using low growth rate and growth interruptions
Lachab M, Sakaki H
Applied Surface Science, 254(11), 3385, 2008 |
| 4 |
Study on the properties of CuInSe2 ingots grown from the melt using stoichiometric and non-stoichiometric charges
Lachab M, Attia AA, Llinares C
Journal of Crystal Growth, 280(3-4), 474, 2005 |
| 5 |
MOCVD growth of device-quality GaN on sapphire using a three-step approach
Liu BL, Lachab M, Jia A, Yoshikawaa A, Takahashi K
Journal of Crystal Growth, 234(4), 637, 2002 |
| 6 |
Characterization of Mg-doped GaN grown by metalorganic chemical vapor deposition
Lachab M, Youn DH, Fareed RSQ, Wang T, Sakai S
Solid-State Electronics, 44(9), 1669, 2000 |
| 7 |
Structural, compositional and photoluminescence characteristics of CuInSe2 thin films prepared by close-spaced vapor transport
Zouaoui A, Lachab M, Hidalgo ML, Chaffa A, Llinares C, Kesri N
Thin Solid Films, 339(1-2), 10, 1999 |
