화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Data retention under gate stress on a NVM array
Djenadi R, Micolau G, Postel-Pellerin J, Chiquet P, Laffont R, Ogier JL, Regnier A, Lalande F, Melkonian J
Solid-State Electronics, 78, 80, 2012
2 New EEPROM concept for single bit operation
Raguet JR, Laffont R, Bouchakour R, Bidal V, Regnier A, Mirabel JM
Solid-State Electronics, 52(10), 1525, 2008
3 An experimental method allowing quantifying and localizing failed cells of an EEPROM CAST after a retention test
Le Roux C, Lopez L, Firiti A, Ogier JL, Lalande F, Laffont R, Micolau G
Solid-State Electronics, 52(10), 1550, 2008