검색결과 : 12건
No. | Article |
---|---|
1 |
FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration Fenouillet-Beranger C, Previtali B, Batude P, Nemouchi F, Casse M, Garros X, Tosti L, Rambal N, Lafond D, Dansas H, Pasini L, Brunet L, Deprat F, Gregoire M, Mellier M, Vinet M Solid-State Electronics, 113, 2, 2015 |
2 |
Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains Hartmann JM, Benevent V, Barnes JP, Veillerot M, Lafond D, Damlencourt JF, Morvan S, Previtali B, Andrieu F, Loubet N, Dutartre D Solid-State Electronics, 83, 10, 2013 |
3 |
Transistors on hybrid UTBB/Bulk substrates fabricated by local internal BOX dissolution Nguyen P, Andrieu F, Casse M, Tabone C, Perreau P, Lafond D, Dansas H, Tosti L, Veytizou C, Landru D, Kononchuk O, Guiot E, Nguyen BY, Faynot O, Poiroux T Solid-State Electronics, 90, 39, 2013 |
4 |
Study of annealing temperature influence on the performance of top gated graphene/SiC transistors Clavel M, Poiroux T, Mouis M, Becerra L, Thomassin JL, Zenasni A, Lapertot G, Rouchon D, Lafond D, Faynot O Solid-State Electronics, 71, 2, 2012 |
5 |
Stability of 8-hydroxyquinoline aluminum films encapsulated by a single Al2O3 barrier deposited by low temperature atomic layer deposition Maindron T, Simon JY, Viasnoff E, Lafond D Thin Solid Films, 520(23), 6876, 2012 |
6 |
Mechanism of Thermal Silicon Oxide Direct Wafer Bonding Ventosa C, Morales C, Libralesso L, Fournel F, Papon AM, Lafond D, Moriceau H, Penot JD, Rieutord F Electrochemical and Solid State Letters, 12(10), H373, 2009 |
7 |
Chemical and Structural Properties of a TaN/HfO2 Gate Stack Processed Using Atomic Vapor Deposition Gaumer C, Martinez E, Lhostis S, Wiemer C, Perego M, Loup V, Lafond D, Fabbri JM Journal of the Electrochemical Society, 156(7), G78, 2009 |
8 |
Copper Direct-Bonding Characterization and Its Interests for 3D Integration Gueguen P, Di Cioccio L, Gergaud P, Rivoire M, Scevola D, Zussy M, Charvet AM, Bally L, Lafond D, Clavelier L Journal of the Electrochemical Society, 156(10), H772, 2009 |
9 |
Performance and physics of sub-50 nm strained Si on Si1-xGex-on-insulator (SGOI) nMOSFETs Andrieu F, Ernst T, Faynot O, Rozeau O, Bogumilowicz Y, Hartmann JM, Brevard L, Toffoli A, Lafond D, Ghyselen B, Fournel F, Ghibaudo G, Deleonibus S Solid-State Electronics, 50(4), 566, 2006 |
10 |
Single-electron phenomena in ultra-scaled floating-gate devices and their impact on electrical characteristics Deleruyelle D, Molas G, DeSalvo B, Gely M, Lafond D Solid-State Electronics, 49(11), 1728, 2005 |