화학공학소재연구정보센터
검색결과 : 12건
No. Article
1 FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration
Fenouillet-Beranger C, Previtali B, Batude P, Nemouchi F, Casse M, Garros X, Tosti L, Rambal N, Lafond D, Dansas H, Pasini L, Brunet L, Deprat F, Gregoire M, Mellier M, Vinet M
Solid-State Electronics, 113, 2, 2015
2 Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains
Hartmann JM, Benevent V, Barnes JP, Veillerot M, Lafond D, Damlencourt JF, Morvan S, Previtali B, Andrieu F, Loubet N, Dutartre D
Solid-State Electronics, 83, 10, 2013
3 Transistors on hybrid UTBB/Bulk substrates fabricated by local internal BOX dissolution
Nguyen P, Andrieu F, Casse M, Tabone C, Perreau P, Lafond D, Dansas H, Tosti L, Veytizou C, Landru D, Kononchuk O, Guiot E, Nguyen BY, Faynot O, Poiroux T
Solid-State Electronics, 90, 39, 2013
4 Study of annealing temperature influence on the performance of top gated graphene/SiC transistors
Clavel M, Poiroux T, Mouis M, Becerra L, Thomassin JL, Zenasni A, Lapertot G, Rouchon D, Lafond D, Faynot O
Solid-State Electronics, 71, 2, 2012
5 Stability of 8-hydroxyquinoline aluminum films encapsulated by a single Al2O3 barrier deposited by low temperature atomic layer deposition
Maindron T, Simon JY, Viasnoff E, Lafond D
Thin Solid Films, 520(23), 6876, 2012
6 Mechanism of Thermal Silicon Oxide Direct Wafer Bonding
Ventosa C, Morales C, Libralesso L, Fournel F, Papon AM, Lafond D, Moriceau H, Penot JD, Rieutord F
Electrochemical and Solid State Letters, 12(10), H373, 2009
7 Chemical and Structural Properties of a TaN/HfO2 Gate Stack Processed Using Atomic Vapor Deposition
Gaumer C, Martinez E, Lhostis S, Wiemer C, Perego M, Loup V, Lafond D, Fabbri JM
Journal of the Electrochemical Society, 156(7), G78, 2009
8 Copper Direct-Bonding Characterization and Its Interests for 3D Integration
Gueguen P, Di Cioccio L, Gergaud P, Rivoire M, Scevola D, Zussy M, Charvet AM, Bally L, Lafond D, Clavelier L
Journal of the Electrochemical Society, 156(10), H772, 2009
9 Performance and physics of sub-50 nm strained Si on Si1-xGex-on-insulator (SGOI) nMOSFETs
Andrieu F, Ernst T, Faynot O, Rozeau O, Bogumilowicz Y, Hartmann JM, Brevard L, Toffoli A, Lafond D, Ghyselen B, Fournel F, Ghibaudo G, Deleonibus S
Solid-State Electronics, 50(4), 566, 2006
10 Single-electron phenomena in ultra-scaled floating-gate devices and their impact on electrical characteristics
Deleruyelle D, Molas G, DeSalvo B, Gely M, Lafond D
Solid-State Electronics, 49(11), 1728, 2005