검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Protective coatings of hafnium dioxide by atomic layer deposition for microelectromechanical systems applications Berdova M, Wiemer C, Lamperti A, Tallarida G, Cianci E, Lamagna L, Losa S, Rossini S, Somaschini R, Gioveni S, Fanciulli M, Franssila S Applied Surface Science, 368, 470, 2016 |
| 2 |
Atomic Layer Deposition of Al-Doped ZrO2 Thin Films as Gate Dielectric for In0.53Ga0.47As Lamagna L, Molle A, Wiemer C, Spiga S, Grazianetti C, Congedo G, Fanciulli M Journal of the Electrochemical Society, 159(3), H220, 2012 |
| 3 |
Detection of the Tetragonal Phase in Atomic Layer Deposited La-Doped ZrO2 Thin Films on Germanium Wiemer C, Lamperti A, Lamagna L, Salicio O, Molle A, Fanciulli M Journal of the Electrochemical Society, 158(8), G194, 2011 |
| 4 |
Cubic/Tetragonal Phase Stabilization in High-kappa ZrO2 Thin Films Grown Using O-3-Based Atomic Layer Deposition Lamperti A, Lamagna L, Congedo G, Spiga S Journal of the Electrochemical Society, 158(10), G221, 2011 |
| 5 |
Interface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stacks Molle A, Lamagna L, Spiga S, Fanciulli M, Brammertz G, Meuris M Thin Solid Films, 518, S123, 2010 |
| 6 |
Chemical/Structural Nanocharacterization and Electrical Properties of ALD-Grown La2O3/Si Interfaces for Advanced Gate Stacks Schamm S, Coulon PE, Miao S, Volkos SN, Lu LH, Lamagna L, Wiemer C, Tsoutsou D, Scarel G, Fanciulli M Journal of the Electrochemical Society, 156(1), H1, 2009 |
| 7 |
Chemical and structural properties of atomic layer deposited La2O3 films capped with a thin Al2O3 layer Li XL, Tsoutsou D, Scarel G, Wiemer C, Capelli SC, Volkos SN, Lamagna L, Fanciulli M Journal of Vacuum Science & Technology A, 27(2), L1, 2009 |
| 8 |
Investigation of interfacial layer development between thin Al2O3 films grown using atomic layer deposition and Si(100), Ge(100), or GaAs(100) Lamagna L, Scarel G, Fanciulli M, Pavia G Journal of Vacuum Science & Technology A, 27(3), 443, 2009 |