검색결과 : 273건
| No. | Article |
|---|---|
| 1 |
O-band InAs/GaAs quantum dot laser monolithically integrated on exact (001) Si substrate Li KS, Liu ZZ, Tang MC, Liao MY, Kim D, Deng HW, Sanchez AM, Beanland R, Martin M, Baron T, Chen SM, Wu J, Seeds A, Liu HY Journal of Crystal Growth, 511, 56, 2019 |
| 2 |
MOVPE grown GaInAsP/GaInAsP SCH-MQW laser diode on directly-bonded InP/Si substrate Sugiyama H, Uchida K, Han X, Periyanayagam GK, Aikawa M, Hayasaka N, Shimomura K Journal of Crystal Growth, 507, 93, 2019 |
| 3 |
Compensation effects of high oxygen levels in semipolar AlGaN electron blocking layers and their mitigation via growth optimization Becerra DL, Cohen DA, Mehari S, DenBaars SP, Nakamura S Journal of Crystal Growth, 507, 118, 2019 |
| 4 |
Structure optimization of 266 nm Al0.53GaN/Al0.75GaN SQW DUV-LD Niass MI, Zang JW, Lu ZQ, Du ZQ, Chen X, Qu YP, Wang F, Liu YH Journal of Crystal Growth, 506, 24, 2019 |
| 5 |
Comparison between InP-based quantum dot lasers with and without tunnel injection quantum well and the impact of rapid thermal annealing Bauer S, Sichkovskyi V, Schnabel F, Sengul A, Reithmaier JP Journal of Crystal Growth, 516, 34, 2019 |
| 6 |
GaSbBi/GaSb quantum-well and wire laser diodes Ridene S Chemical Physics Letters, 702, 44, 2018 |
| 7 |
Lifetime behavior of laser diodes with highly strained InGaAs QWs and emission wavelength between 1120 nm and 1180 nm Bugge F, Bege R, Blume G, Feise D, Sumpf B, Werner N, Zeimer U, Paschke K, Weyers M Journal of Crystal Growth, 491, 31, 2018 |
| 8 |
Spectroscopic, thermal, and laser properties of disordered garnet Nd:CLTGG crystal Ma CY, Wang YM, Cheng XF, Xue M, Zuo CH, Gao CY, Guo SY, He JL Journal of Crystal Growth, 504, 44, 2018 |
| 9 |
Micro-crystallization and spectroscopic properties of Er, Yb:RAl-borates (R=Y, Gd) obtained in RAl3(BO3)(4)-K2Mo3O10-B2O3-R2O3 and RAl3(BO3)(4)-B2O3 systems Naprasnikov DA, Maltsev VV, Leonyuk NI, Gorbachenya KN, Kurilchik SV, Kisel VE, Kuleshov NV Journal of Crystal Growth, 457, 302, 2017 |
| 10 |
Dopant incorporation in Al0.9Ga0.1As0.06Sb0.94 grown by molecular beam epitaxy Patra SK, Tran N, Vines L, Kolevatov I, Monakhov E, Fimland BO Journal of Crystal Growth, 463, 116, 2017 |