검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Heavily tellurium doped n-type InGaAs grown by MOCVD on 300 mm Si wafers Orzali T, Vert A, Lee RTP, Norvilas A, Huang G, Herman JL, Hill RJW, Rao SSP Journal of Crystal Growth, 426, 243, 2015 |
| 2 |
Achieving Sub-0.1 eV Hole Schottky Barrier Height for NiSiGe on SiGe by Aluminum Segregation Sinha M, Lee RTP, Lohani A, Mhaisalkar S, Chor EF, Yeo YC Journal of the Electrochemical Society, 156(4), H233, 2009 |
| 3 |
Nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistors Koh ATY, Lee RTP, Lim AEJ, Lai DMY, Chi DZ, Hoe KM, Balasubramanian N, Samudra GS, Yeo YC Journal of the Electrochemical Society, 155(3), H151, 2008 |
| 4 |
Probing the ErSi1.7 phase formation by micro-Raman spectroscopy Lee RTP, Tan KM, Liow TY, Ho CS, Tripathy S, Samudra GS, Chi DZ, Yeo YC Journal of the Electrochemical Society, 154(5), H361, 2007 |
| 5 |
Addressing materials and integration issues for NiSi silicide contact metallization in nano-scale CMOS devices Chi DZ, Lee RTP, Wong ASW Thin Solid Films, 515(22), 8102, 2007 |
| 6 |
Full silicidation of silicon gate electrodes using nickel-terbium alloy for MOSFET applications Lim AEJ, Lee RTP, Tung CH, Tripathy S, Kwong DL, Yeo YC Journal of the Electrochemical Society, 153(4), G337, 2006 |
| 7 |
Enhanced morphological stability of NiGe films formed using Ni(Zr) alloy Liew SL, Lee RTP, Lee KY, Balakrisnan B, Chow SY, Lai MY, Chi DZ Thin Solid Films, 504(1-2), 104, 2006 |
| 8 |
Fully silicided Ni1-xPtxSi metal gate electrode for p-MOSFETs Lee RTP, Liew SL, Wang WD, Chua EKC, Chow SY, Lai MY, Chi DZ Electrochemical and Solid State Letters, 8(7), G156, 2005 |
| 9 |
Effects of Ti incorporation in Ni on silicidation reaction and structural/electrical properties of NiSi Lee RTP, Chi DZ, Lai MY, Yakovlev NL, Chua SJ Journal of the Electrochemical Society, 151(9), G642, 2004 |