화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Base Metallization Stability in InP/InGaAs Heterojunction Bipolar-Transistors and Its Influence on Leakage Currents
Caffin D, Besombes C, Bresse JF, Legay P, Leroux G, Patriarche G, Launay P
Journal of Vacuum Science & Technology B, 15(4), 854, 1997
2 (NH4)(2)S-X Preepitaxial Treatment for GaAs Chemical Beam Epitaxy Regrowth
Sik H, Driad R, Legay P, Juhel M, Harmand JC, Launay P, Alexandre F
Journal of Vacuum Science & Technology B, 14(1), 147, 1996