화학공학소재연구정보센터
검색결과 : 11건
No. Article
1 Development and application of a stereoscopic 3-color high-speed ratio-pyrometry
Jakob M, Lehnen P, Adomeit P, Pischinger S
Combustion and Flame, 161(11), 2825, 2014
2 Transgenic over-expression of interleukin-33 in osteoblasts results in decreased osteoclastogenesis
Keller J, Catala-Lehnen P, Wintges K, Schulze J, Bickert T, Ito W, Horst AK, Amling M, Schinke T
Biochemical and Biophysical Research Communications, 417(1), 217, 2012
3 Equivalent Oxide Thickness Reduction for High-k Gate Stacks by Optimized Rare-Earth Silicate Reactions
Van Elshocht S, Adelmann C, Lehnen P, De Gendt S
Electrochemical and Solid State Letters, 12(5), G17, 2009
4 Alternative high-k dielectrics for semiconductor applications
Van Elshocht S, Adelmann C, Clima S, Pourtois G, Conard T, Delabie A, Franquet A, Lehnen P, Meersschaut J, Menou N, Popovici M, Richard O, Schram T, Wang XP, Hardy A, Dewulf D, Van Bael MK, Lehnen P, Blomberg T, Pierreux D, Swerts J, Maes JW, Wouters DJ, De Gendt S, Kittl JA
Journal of Vacuum Science & Technology B, 27(1), 209, 2009
5 Silicate formation and thermal stability of ternary rare earth oxides as high-k dielectrics
Van Elshocht S, Adelmann C, Conard T, Delabie A, Franquet A, Nyns L, Richard O, Lehnen P, Swerts J, De Gendt S
Journal of Vacuum Science & Technology A, 26(4), 724, 2008
6 Achieving low-V-T Ni-FUSICMOS via lanthanide incorporation in the gate stack
Veloso A, Yu HY, Lauwers A, Chang SZ, Adelmann C, Onsia B, Demand M, Brus S, Vrancken C, Singanamalla R, Lehnen P, Kittl J, Kauerauf T, Vos R, O'Sullivan BJ, Van Elshocht S, Mitsuhashi R, Whittemore G, Yin KM, Niwa M, Hoffmann T, Absil P, Jurczak M, Biesemans S
Solid-State Electronics, 52(9), 1303, 2008
7 Metallorganic chemical vapor deposition of dysprosium scandate high-k layers using mmp-type precursors
Van Elshocht S, Lehnen P, Seitzinger B, Abrutis A, Adelmann C, Brijs B, Caymax M, Conard T, De Gendt S, Franquet A, Lohe C, Lukosius M, Moussa A, Richard O, Williams P, Witters T, Zimmerman P, Heyns M
Journal of the Electrochemical Society, 153(9), F219, 2006
8 Low-temperature growth of polycrystalline ge films on SiO2 substrate by HDPCVD
Yang MJ, Shieh J, Hsu SL, Huang IJ, Leu CC, Shen SW, Huang TY, Lehnen P, Chien CH
Electrochemical and Solid State Letters, 8(5), C74, 2005
9 Electrical characterization of capacitors with AVD-deposited hafnium silicates as high-k gate dielectric
Van Elshocht S, Weber U, Conard T, Kaushik V, Houssa M, Hyun S, Seitzinger B, Lehnen P, Schumacher M, Lindner J, Caymax M, De Gendt S, Heyns M
Journal of the Electrochemical Society, 152(11), F185, 2005
10 Effects of low-temperature NH3 treatment on the characteristics of HfO2/SiO2 gate stack
Lu WT, Chien CH, Huang IJ, Yang MJ, Lehnen P, Huang TY
Journal of the Electrochemical Society, 152(11), G799, 2005