검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Highly tin doped GaAs at low growth temperatures using tetraethyl tin by metal organic vapor phase epitaxy Elleuch O, Lekhal K, Guan YX, Kuech TF Journal of Crystal Growth, 507, 255, 2019 |
| 2 |
Selective-area growth of vertically oriented GaN nanostructures with a hafnium pre-orienting layer Bae SY, Lekhal K, Lee HJ, Mitsunari T, Min JW, Lee DS, Kushimoto M, Honda Y, Amano H Journal of Crystal Growth, 468, 110, 2017 |
| 3 |
Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si(001) with a directionally sputtered AlN buffer layer Lee HJ, Bae SY, Lekhal K, Tamura A, Suzuki T, Kushimoto M, Honda Y, Amano H Journal of Crystal Growth, 468, 547, 2017 |
| 4 |
Effect of V/III ratio on the surface morphology and electrical properties of m-plane (10(1)over-bar0) GaN homoepitaxial layers Barry OI, Tanaka A, Nagamatsu K, Bae SY, Lekhal K, Matsushita J, Deki M, Nitta S, Honda Y, Amano H Journal of Crystal Growth, 468, 552, 2017 |
| 5 |
Optimized In composition and quantum well thickness for yellow-emitting (Ga,In)N/GaN multiple quantum wells Lekhal K, Hussain S, De Mierry P, Vennegues P, Nemoz M, Chauveau JM, Damilano B Journal of Crystal Growth, 434, 25, 2016 |
| 6 |
Controlled morphology of regular GaN microrod arrays by a selective area growth with HVPE Lekhal K, Bae SY, Lee HJ, Mitsunari T, Tamura A, Deki M, Honda Y, Amano H Journal of Crystal Growth, 447, 55, 2016 |
| 7 |
Improved crystal quality of semipolar (10(1)over-bar3) GaN on Si(001) substrates using AlN/GaN superlattice interlayer Lee HJ, Bae SY, Lekhal K, Mitsunari T, Tamura A, Honda Y, Amano H Journal of Crystal Growth, 454, 114, 2016 |