검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H-SiC crystals grown by PVT method Guo JQ, Yang Y, Wu FZ, Sumakeris J, Leonard R, Goue O, Raghothamachar B, Dudley M Journal of Crystal Growth, 452, 39, 2016 |
| 2 |
Adaptation of the "in-gel release method" to N-glycome analysis of low-milligram amounts of material Rendic D, Wilson LBH, Lubec G, Gutternigg M, Altmann F, Leonard R Electrophoresis, 28(23), 4484, 2007 |
| 3 |
High quality SiC substrates for semiconductor devices: From research to industrial production Muller SG, Brady MF, Brixius WH, Fechko G, Glass RC, Henshall D, Hobgood HM, Jenny JR, Leonard R, Malta D, Powell A, Tsvetkov VF, Allen S, Palmour J, Carter CH Materials Science Forum, 389-3, 23, 2002 |
| 4 |
Status of large diameter SiC crystal growth for electronic and optical applications Hobgood D, Brady M, Brixius W, Fechko G, Glass R, Henshall D, Jenny J, Leonard R, Malta D, Muller S, Tsvetkov V, Carter C Materials Science Forum, 338-3, 3, 2000 |