검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Molecular beam epitaxy growth of bulk GaNAsSb on Ge/graded-SiGe/Si substrate Ng TK, Yoon SF, Tan KH, Chen KP, Tanoto H, Lew KL, Wicaksono S, Loke WK, Dohrman C, Fitzgerald EA Journal of Crystal Growth, 311(7), 1754, 2009 |
| 2 |
High gain AlGaAs/GaAs heterojunction bipolar transistor fabricated on SiGe/Si substrate Lew KL, Yoon SF, Loke WK, Tanoto H, Dohrman CL, Isaacson DM, Fitzgerald EA Journal of Vacuum Science & Technology B, 25(3), 902, 2007 |
| 3 |
GaAsNSb-base GaAs heterojunction bipolar transistor with a low turn-on voltage Lew KL, Yoon SF, Wang H, Wicaksono S, Gupta JA, McAlister SP Journal of Vacuum Science & Technology B, 24(3), 1308, 2006 |
| 4 |
InGaP/GaAs/InGaP composite collector double heterojunction bipolar transistor with high breakdown, low offset, and knee voltage Lew KL, Zhang R, Yoon SF Journal of Vacuum Science & Technology B, 22(2), 579, 2004 |
| 5 |
Study of direct current characteristics of carbon-doped GaInP/GaAs heterojunction bipolar transistor grown by solid source molecular beam epitaxy Zhang R, Lew KL, Yoon SF, Tan KH, Sun ZZ Journal of Vacuum Science & Technology B, 22(2), 838, 2004 |
| 6 |
Carbon-doped InP/In0.53Ga0.47As single and double heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy Zhang R, Yoon SF, Tan KH, Lew KL, Sun ZZ Journal of Vacuum Science & Technology B, 22(5), 2499, 2004 |