화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 MOVPE grown periodic AlN/BAIN heterostructure with high boron content
Li X, Sundaram S, El Gmili Y, Genty F, Bouchoule S, Patriache G, Disseix P, Reveret F, Leymarie J, Salvestrini JP, Dupuis RD, Voss PL, Ougazzaden A
Journal of Crystal Growth, 414, 119, 2015
2 Spatially resolved optical control of GaN grown by selective area hydride vapor phase epitaxy
Reveret F, Andre Y, Gourmala O, Leymarie J, Mihailovic M, Lagarde D, Gil E, Castelluci D, Trassoudaine A
Journal of Crystal Growth, 421, 27, 2015
3 Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm
Li X, Le Gac G, Bouchoule S, El Gmili Y, Patriarche G, Sundaram S, Disseix P, Reveret F, Leymarie J, Streque J, Genty F, Salvestrini JP, Dupuis RD, Li XH, Voss PL, Ougazzaden A
Journal of Crystal Growth, 432, 37, 2015
4 Surface-plasmon resonances in indium nitride with metal-enriched nano-particles
Shubina TV, Plotnikov DS, Vasson A, Leymarie J, Larsson M, Holtz PO, Monemar B, Lu H, Schaff WJ, Kop'ev PS
Journal of Crystal Growth, 288(2), 230, 2006
5 The determination of e(14) in (111)B-grown (In,Ga)As/GaAs strained layers
Ballet P, Disseix P, Leymarie J, Vasson A, Vasson AM, Grey R
Thin Solid Films, 336(1-2), 354, 1998
6 Photoluminescence studies of As-P exchange in GaAs/GaInP2 quantum wells grown by chemical beam epitaxy
Aurand A, Leymarie J, Vasson A, Vasson AM, Mesrine M, Deparis C, Leroux M
Thin Solid Films, 336(1-2), 358, 1998