| 1 |
Effective surface passivation of In0.53Ga0.47As(001) using molecular beam epitaxy and atomic layer deposited HfO2 - A comparative study
Hong M, Wan HW, Chang P, Lin TD, Chang YH, Lee WC, Pi TW, Kwo J
Journal of Crystal Growth, 477, 159, 2017 |
| 2 |
Surface atoms core-level shifts in single crystal GaAs surfaces: Interactions with trimethylaluminum and water prepared by atomic layer deposition
Pi TW, Lin HY, Chiang TH, Liu YT, Chang YC, Lin TD, Wertheim GK, Kwo J, Hong M
Applied Surface Science, 284, 601, 2013 |
| 3 |
Low interfacial density of states around midgap in MBE-Ga2O3(Gd2O3)/In0.2Ga0.8As
Lin CA, Chiu HC, Chiang TH, Chang YC, Lin TD, Kwo J, Wang WE, Dekoster J, Heyns M, Hong M
Journal of Crystal Growth, 323(1), 99, 2011 |
| 4 |
MBE-Enabling technology beyond Si CMOS
Chang P, Lee WC, Lin TD, Hsu CH, Kwo J, Hong M
Journal of Crystal Growth, 323(1), 511, 2011 |
| 5 |
Achieving very high drain current of 1.23 mA/mu m in a 1-mu m-gate-length self-aligned inversion-channel MBE-Al2O3/Ga2O3(Gd2O3)/In0.75Ga0.25As MOSFET
Lin TD, Chang P, Wu YD, Chiu HC, Kwo J, Hong M
Journal of Crystal Growth, 323(1), 518, 2011 |
| 6 |
Self-aligned inversion-channel In0.75Ga0.25As metal-oxide-semiconductor field-effect-transistors using UHV-Al2O3/Ga2O3(Gd2O3) and ALD-Al2O3 as gate dielectrics
Lin TD, Chiu HC, Chang P, Chang YH, Wu YD, Hong M, Kwo J
Solid-State Electronics, 54(9), 919, 2010 |
| 7 |
Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-kappa dielectrics on Ge without interfacial layers
Chu LK, Chu RL, Lin TD, Lee WC, Lin CA, Huang ML, Lee YJ, Kwo J, Hong M
Solid-State Electronics, 54(9), 965, 2010 |
| 8 |
Depletion-mode In0.2Ga0.8As/GaAs MOSFET with molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3) as gate dielectrics
Lin CA, Lin TD, Chiang TH, Chiu HC, Chang P, Hong M, Kwo J
Journal of Crystal Growth, 311(7), 1954, 2009 |
| 9 |
Molecular beam epitaxy-grown Al2O3/HfO2 high-kappa dielectrics for germanium
Lee WC, Chin BH, Chu LK, Lin TD, Lee YJ, Tung LT, Lee CH, Hong M, Kwo J
Journal of Crystal Growth, 311(7), 2187, 2009 |
| 10 |
Molecular beam epitaxy grown Ga2O3(Gd2O3) high kappa dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristics
Lee CH, Lin TD, Tung LT, Huang ML, Hong M, Kwo J
Journal of Vacuum Science & Technology B, 26(3), 1128, 2008 |
