| 1 |
Nondestructive analysis of lithographic patterns with natural line edge roughness from Mueller matrix ellipsometric data
Chen XG, Shi YT, Jiang H, Zhang CW, Liu SY
Applied Surface Science, 388, 524, 2016 |
| 2 |
Resistivity of epitaxial copper nanolines with trapezoidal cross-section
Lu ZH, Frey DM, Merkh T, Lord R, Washington MA, Lu TM
Thin Solid Films, 599, 187, 2016 |
| 3 |
Extraction of roughness parameters at nanometer scale by Monte Carlo simulation of Critical Dimension Scanning Electron Microscopy
Ciappa M, Ilgunsatiroglu E, Illarionov AY
Solid-State Electronics, 113, 73, 2015 |
| 4 |
Comprehensive study of the statistical variability in a 22 nm fully depleted ultra-thin-body SOI MOSFET
Zain ASM, Markov S, Cheng BJ, Asenov A
Solid-State Electronics, 90, 51, 2013 |
| 5 |
Etching characteristics of silicon oxide using amorphous carbon hard mask in dual-frequency capacitively coupled plasma
Lee JH, Kwon BS, Lee NE
Thin Solid Films, 521, 83, 2012 |
| 6 |
Off-plane diffraction of extreme ultraviolet light caused by line width roughness
Chen WY, Lin CH
Thin Solid Films, 522, 79, 2012 |
| 7 |
The effects of gas flow rates on the etch characteristics of silicon nitride with an extreme ultra-violet resist pattern in CH2F2/N-2/Ar capacitively coupled plasmas
Kwon BS, Lee JH, Lee NE
Thin Solid Films, 519(20), 6741, 2011 |
| 8 |
Comparison of line edge roughness and profile angles of chemical vapor deposited amorphous carbon etched in O-2/N-2/Ar and H-2/N-2/Ar inductively coupled plasmas
Park YR, Kwon BS, Jung CY, Heo W, Lee NE, Shon JW
Thin Solid Films, 519(20), 6755, 2011 |
| 9 |
V-DD scalability of FinFET SRAMs: Robustness of different design options against LER-induced variations
Baravelli E, De Marchi L, Speciale N
Solid-State Electronics, 54(9), 909, 2010 |
| 10 |
Evaluation of statistical variability in 32 and 22 nm technology generation LSTP MOSFETs
Cheng B, Roy S, Brown AR, Millar C, Asenov A
Solid-State Electronics, 53(7), 767, 2009 |
