검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Anomalous behavior of van der Pauw sheet resistance measurements on 4H-SiC MOS inversion layers with anisotropic mobility Saks NS, Ancona MG, Lipkin LA Materials Science Forum, 457-460, 689, 2004 |
| 2 |
High-current, NO-annealed lateral 4H-SiC MOSFETs Das MK, Chung GY, Williams JR, Saks NS, Lipkin LA, Palmour JW Materials Science Forum, 389-3, 981, 2002 |
| 3 |
N2O processing improves the 4H-SiC : SiO2 interface Lipkin LA, Das MK, Palmour JW Materials Science Forum, 389-3, 985, 2002 |
| 4 |
SiC devices with ONO stacked dielectrics Lipkin LA, Palmour JW Materials Science Forum, 338-3, 1093, 2000 |
| 5 |
4H-SiC self-aligned implant-diffused structure for power DMOSFETs Suvorov AV, Lipkin LA, Johnson GM, Singh R, Palmour JW Materials Science Forum, 338-3, 1275, 2000 |