검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
GaN based LEDs with semipolar QWs employing embedded sub-micrometer sized selectively grown 3D structures Leute RAR, Heinz D, Wang J, Lipski F, Meisch T, Thonke K, Thalmair J, Zweck J, Scholz F Journal of Crystal Growth, 370, 101, 2013 |
| 2 |
Studies about wafer bow of freestanding GaN substrates grown by hydride vapor phase epitaxy Lipski F, Klein M, Yao X, Scholz F Journal of Crystal Growth, 352(1), 235, 2012 |
| 3 |
High quality AlGaN epilayers grown on sapphire using SiNx interlayers Forghani K, Klein M, Lipski F, Schwaiger S, Hertkorn J, Leute RAR, Scholz F, Feneberg M, Neuschl B, Thonke K, Klein O, Kaiser U, Gutt R, Passow T Journal of Crystal Growth, 315(1), 216, 2011 |
| 4 |
Process optimization for the effective reduction of threading dislocations in MOVPE grown GaN using in situ deposited SiNx masks Hertkorn J, Lipski F, Bruckner R, Wunderer T, Thapa SB, Scholz F, Chuvilin A, Kaiser U, Beer M, Zweck J Journal of Crystal Growth, 310(23), 4867, 2008 |
| 5 |
MOVPE growth of GaN around ZnO nanopillars Thapa SB, Hertkorn J, Wunderer T, Lipski F, Scholz F, Reiser A, Xie Y, Feneberg M, Thonke K, Sauer R, Durrschnabel M, Yao LD, Gerthsen D, Hochmuth H, Lorenz M, Grundmann M Journal of Crystal Growth, 310(23), 5139, 2008 |
| 6 |
Semipolar GaN/GaInN LEDs with more than 1 mW optical output power Neubert B, Wunderer T, Bruckner P, Scholz F, Feneberg M, Lipski F, Schirra M, Thonke K Journal of Crystal Growth, 298, 706, 2007 |