| 1 |
Single-junction solar cells based on p-i-n GaAsSbN heterostructures grown by liquid phase epitaxy
Milanova M, Donchev V, Cheetham KJ, Cao ZM, Sandall I, Piana GM, Hutter OS, Durose K, Mumtaz A
Solar Energy, 208, 659, 2020 |
| 2 |
Spinodal decomposition and composition modulation effect at the low-temperature synthesis of A(x)(3)B(1-x)(3)C(5) semiconductor solid solutions
Moskvin PP, Skurativskyi SI, Kravchenko OP, Skyba GV, Shapovalov HV
Journal of Crystal Growth, 510, 40, 2019 |
| 3 |
SiGe films and graded buffers grown by liquid phase epitaxy from different growth solution compositions
Wang J, Quitoriano NJ
Journal of Crystal Growth, 510, 65, 2019 |
| 4 |
Growth of ErAs:GaAs nanocomposite by liquid phase epitaxy
Tew BE, Lewis MR, Hsu CY, Ni CY, Zide JMO
Journal of Crystal Growth, 518, 34, 2019 |
| 5 |
GaN crystals growth in the Na-Li-Ca flux by liquid phase epitaxy (LPE) technique
Wu X, Hao HF, Li ZR, Fan SJ, Xu Z
Journal of Crystal Growth, 521, 30, 2019 |
| 6 |
Effect of Sb in thick InGaAsSbN layers grown by liquid phase epitaxy
Donchev V, Milanova M, Asenova I, Shtinkov N, Alonso-Alvarez D, Mellor A, Karmakov Y, Georgiev S, Ekins-Daukes N
Journal of Crystal Growth, 483, 140, 2018 |
| 7 |
Reduction of threading dislocation density in SiGe epilayer on Si (001) by lateral growth liquid-phase epitaxy
O'Reilly AJ, Quitoriano NJ
Journal of Crystal Growth, 483, 223, 2018 |
| 8 |
Asymmetric, compressive, SiGe epilayers on Si grown by lateral liquid-phase epitaxy utilizing a distinction between dislocation nucleation and glide critical thicknesses
O'Reilly AJ, Quitoriano N
Journal of Crystal Growth, 482, 15, 2018 |
| 9 |
Mesa orientation dependence of lateral growth of GaN microchannel epitaxy by electric liquid-phase epitaxy using a mesa-shaped substrate
Kambayashi D, Mizuno Y, Takakura H, Maruyama T, Naritsuka S
Journal of Crystal Growth, 496, 74, 2018 |
| 10 |
Growth evolution of SiGe graded buffers during LPE cooling process
Wang J, Shen YJ, Quitoriano N
Journal of Crystal Growth, 502, 54, 2018 |
