검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Effect of dislocations on luminescence properties of silicon-doped GaN grown by metalorganic chemical vapor deposition method Alam J, Bathe R, Vispute RD, Zavada JM, Litton CW, Iliadis AA, Mohammad SN Journal of Vacuum Science & Technology B, 22(2), 624, 2004 |
| 2 |
Two-step surface treatment technique: Realization of nonalloyed low-resistance Ti/Al/Ti/Au ohmic contact to n-GaN Motayed A, Jah M, Sharma A, Anderson WT, Litton CW, Mohammad SN Journal of Vacuum Science & Technology B, 22(2), 663, 2004 |
| 3 |
Comparative study of Ga- and N-polar GaN films grown on sapphire substrates by molecular beam epitaxy Huang D, Reshchikov MA, Visconti P, Yun F, Baski AA, King T, Morkoc H, Jasinski J, Liliental-Weber Z, Litton CW Journal of Vacuum Science & Technology B, 20(6), 2256, 2002 |