화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating
Choi S, Kim HJ, Lochner Z, Kim J, Dupuis RD, Fischer AM, Juday R, Huang Y, Li T, Huang JYY, Ponce FA, Ryou JH
Journal of Crystal Growth, 388, 137, 2014
2 Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions
Kim J, Lochner Z, Ji MH, Choi S, Kim HJ, Kim JS, Dupuis RD, Fischer AM, Juday R, Huang Y, Li T, Huang JYY, Ponce FA, Ryou JH
Journal of Crystal Growth, 388, 143, 2014
3 Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapor deposition
Liu JP, Zhang Y, Lochner Z, Kim SS, Kim H, Ryou JH, Shen SC, Yoder PD, Dupuis RD, Wei QYY, Sun KWW, Fischer AM, Ponce FA
Journal of Crystal Growth, 315(1), 272, 2011
4 Growth and characterization of NpN heterojunction bipolar transistors with In0.03Ga0.97N and In0.05Ga0.95N bases
Lochner Z, Kim HJ, Choi S, Lee YC, Zhang Y, Shen SC, Ryou JH, Dupuis RD
Journal of Crystal Growth, 315(1), 278, 2011
5 Ordered Nanowire Array Blue/Near-UV Light Emitting Diodes
Xu S, Xu C, Liu Y, Hu YF, Yang RS, Yang Q, Ryou JH, Kim HJ, Lochner Z, Choi S, Dupuis R, Wang ZL
Advanced Materials, 22(42), 4749, 2010
6 Surface morphology control of green LEDs with p-InGaN layers grown by metalorganic chemical vapor deposition
Liu JP, Ryou JH, Lochner Z, Limb J, Yoo DW, Dupuis RD, Wu ZH, Fischer AM, Ponce FA
Journal of Crystal Growth, 310(23), 5166, 2008
7 Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes
Dupuis RD, Ryou JH, Shen SC, Yoder PD, Zhang Y, Kim HJ, Choi S, Lochner Z
Journal of Crystal Growth, 310(23), 5217, 2008