화학공학소재연구정보센터
검색결과 : 17건
No. Article
1 Photovoltaic characteristics of each subcell evaluated in situ in a triple-junction solar cell
Huang TH, Lo H, Lo C, Wu MC, Lour WS
Solid-State Electronics, 126, 109, 2016
2 Sensing properties of resistive-type hydrogen sensors with a Pd-SiO2 thin-film mixture
Lo C, Tan SW, Wei CY, Tsai JH, Lour WS
International Journal of Hydrogen Energy, 38(1), 313, 2013
3 Unidirectional sensing characteristics of structured Au-GaN-Pt diodes for differential-pair hydrogen sensors
Lo C, Tan SW, Wei CY, Tsai JH, Hsu KY, Lour WS
International Journal of Hydrogen Energy, 37(23), 18579, 2012
4 High-performance InGaP/GaAs superlattice-emitter bipolar transistor with multiple S-shaped negative-differential-resistance switches under inverted operation mode
Tsai JH, Huang CH, Lour WS, Chao YT, Ou-Yang JJ, Jhou JC
Thin Solid Films, 521, 168, 2012
5 An InP/InGaAs metamorphic delta-doped heterojunction bipolar transistor with high current gain and low offset voltage
Tsai JH, Lour WS, Chao YT, Ye SS, Ma YC, Jhou JC, Wu YR, Ou-Yang JJ
Thin Solid Films, 521, 172, 2012
6 Hydrogen-sensitive sensor with stabilized Pd-mixture forming sensing nanoparticles on an interlayer
Tan SW, Tsai JH, Lai SW, Lo C, Lour WS
International Journal of Hydrogen Energy, 36(23), 15446, 2011
7 Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor
Tsai JH, Lour WS, Huang CH, Dale NF, Lee YH, Sheng JS, Liu WC
Solid-State Electronics, 54(3), 275, 2010
8 Effect of Emitter Ledge Thickness on InGaP/GaAs Heterojunction Bipolar Transistors
Chen TP, Lee CJ, Cheng SY, Lour WS, Tsai JH, Guo DF, Ku GW, Liu WC
Electrochemical and Solid State Letters, 12(2), H41, 2009
9 Comprehensive investigation on planar type of Pd-GaN hydrogen sensors
Chiu SY, Huang HW, Huang TH, Liang KC, Liu KP, Tsai JH, Lour WS
International Journal of Hydrogen Energy, 34(13), 5604, 2009
10 On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs)
Chen TP, Lee CJ, Lour WS, Guo DF, Tsai JH, Liu WC
Solid-State Electronics, 53(2), 190, 2009