검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Monolithic integration of InP-based transistors on Si substrates using MBE Liu WK, Lubyshev D, Fastenau JM, Wu Y, Bulsara MT, Fitzgerald EA, Urteaga M, Ha W, Bergman J, Brar B, Hoke WE, LaRoche JR, Herrick KJ, Kazior TE, Clark D, Smith D, Thompson RF, Drazek C, Daval N Journal of Crystal Growth, 311(7), 1979, 2009 |
| 2 |
Commercial molecular beam epitaxy production of high quality SrTiO3 on large diameter Si substrates Gu X, Lubyshev D, Batzel J, Fastenau JM, Liu WK, Pelzel R, Magana JF, Ma Q, Wang LP, Zhang P, Rao VR Journal of Vacuum Science & Technology B, 27(3), 1195, 2009 |
| 3 |
Molecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates Lubyshev D, Fastenau JM, Wu Y, Liu WK, Bulsara MT, Fitzgerald EA, Hoke WE Journal of Vacuum Science & Technology B, 26(3), 1115, 2008 |
| 4 |
Comparative studies of the epireadiness of 4 in. InP substrates for molecular-beam epitaxy growth Fastenau JM, Lubyshev D, Wu Y, Doss C, Liu WK Journal of Vacuum Science & Technology B, 23(3), 1262, 2005 |
| 5 |
Comparison of As- and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications Lubyshev D, Fastenau JM, Fang XM, Wu Y, Doss C, Snyder A, Liu WK, Lamb MSM, Bals S, Song C Journal of Vacuum Science & Technology B, 22(3), 1565, 2004 |
| 6 |
Molecular-beam epitaxy production of large-diameter metamorphic high electron mobility transistor and heterojunction bipolar transistor wafers Baklenov O, Lubyshev D, Wu Y, Fang XM, Fastenau JM, Leung L, Towner FJ, Cornfeld AB, Liu WK Journal of Vacuum Science & Technology B, 20(3), 1200, 2002 |
| 7 |
Strain relaxation and dislocation filtering in metamorphic high electron mobility transistor structures grown on GaAs substrates Lubyshev D, Liu WK, Stewart TR, Cornfeld AB, Fang XM, Xu X, Specht P, Kisielowski C, Naidenkova M, Goorsky MS, Whelan CS, Hoke WE, Marsh PF, Millunchick JM, Svensson SP Journal of Vacuum Science & Technology B, 19(4), 1510, 2001 |
| 8 |
The effect of Al0.7Ga0.3As etch stop removal on the preparation of wafer-bonded compliant substrates Zhang C, Lubyshev D, Jackson TN, Miller DL, Mayer TS Journal of the Electrochemical Society, 146(4), 1597, 1999 |
| 9 |
A comparative study of carbon incorporation in heavily doped GaAs and Al0.3Ga0.7As grown by solid-source molecular beam epitaxy using carbon tetrabromide Lubyshev D, Micovic M, Gratteau N, Cai WZ, Miller DL, Ray O, Streater RW, SpringThorpe AJ Journal of Vacuum Science & Technology B, 17(3), 1180, 1999 |
| 10 |
InGaAs/GaAs/AlGaAs GRIN-SCH quantum-well lasers grown by solid-source molecular-beam epitaxy using CBr4 doping Gratteau N, Lubyshev D, Miller DL Journal of Vacuum Science & Technology B, 17(3), 1285, 1999 |