검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Combined silicon, beryllium, and carbon tetrabromide single-port dopant source for molecular-beam epitaxy Moshegov NT, Nordquist CD, Cai WZ, Mayer TS, Lubyshev DI, Miller DL Journal of Vacuum Science & Technology B, 19(4), 1541, 2001 |
| 2 |
Properties of carbon-doped low-temperature GaAs and InP grown by solid-source molecular-beam epitaxy using CBr4 Liu WK, Lubyshev DI, Specht P, Zhao R, Weber ER, Gebauer J, SpringThorpe AJ, Streater RW, Vijarnwannaluk S, Songprakob W, Zallen R Journal of Vacuum Science & Technology B, 18(3), 1594, 2000 |
| 3 |
Heavily carbon-doped In0.53Ga0.47As on InP (001) substrate grown by solid source molecular beam epitaxy Cai WZ, Lubyshev DI, Miller DL, Streater RW, SpringThorpe AJ Journal of Vacuum Science & Technology B, 17(3), 1190, 1999 |
| 4 |
Molecular beam epitaxial growth of InAs on a (311)A corrugated surface : Growth mechanism and morphology Lubyshev DI, Micovic M, Miller D, Chizhov I, Willis RF Journal of Vacuum Science & Technology B, 16(3), 1339, 1998 |
| 5 |
Iodine and carbon tetrabromide use in solid source molecular beam epitaxy Miller DL, Micovic M, Lubyshev DI, Cai WZ, Hwang WY, Zhang K Journal of Vacuum Science & Technology B, 16(3), 1361, 1998 |
| 6 |
High-Index Orientation Effects of Strained Self-Assembled InGaAs Quantum Dots Lubyshev DI, Gonzalezborrero PP, Marega E, Petitprez E, Basmaji P Journal of Vacuum Science & Technology B, 14(3), 2212, 1996 |
| 7 |
The Effect of the MBE Growth-Rate on the Surface Phase-Diagram for GaAs(001) Preobrazhenskii VV, Lubyshev DI, Reginski K, Muszalski J Thin Solid Films, 267(1-2), 51, 1995 |
| 8 |
Static Phase-Diagrams of Reconstructions for MBE-Grown GaAs(001) and AlAs(001) Surfaces Reginski K, Muszalski J, Preobrazhenskii VV, Lubyshev DI Thin Solid Films, 267(1-2), 54, 1995 |