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| No. | Article |
|---|---|
| 1 |
Improvement of molecular beam epitaxy-grown low-temperature GaAs through p doping with Be and C Specht P, Lutz RC, Zhao R, Weber ER, Liu WK, Bacher K, Towner FJ, Stewart TR, Luysberg M Journal of Vacuum Science & Technology B, 17(3), 1200, 1999 |