검색결과 : 26건
| No. | Article |
|---|---|
| 1 |
Influence of overgrown micropipes in the active area of SIC Schottky diodes on long term reliability Rupp R, Treu M, Turkes P, Beermann H, Scherg T, Preis H, Cerva H Materials Science Forum, 483, 925, 2005 |
| 2 |
Large diameter 4H-SiC substrates for commercial power applications Powell AR, Leonard RT, Brady MF, Muller SG, Tsvetkov VF, Trussell R, Sumakeris JJ, Hobgood HM, Burk AA, Glass RC, Carter CH Materials Science Forum, 457-460, 41, 2004 |
| 3 |
Study of polytype switching vs. micropipes in PVT grown SiC single crystals Wang S, Sanchez E, Kopec A, Zhang M, Hernandez O Materials Science Forum, 457-460, 51, 2004 |
| 4 |
X-ray imaging and TEM study of micropipes related to their propagation through porous SiC layer/SiC epilayer interface. Argunova TS, Gutkin MY, Je JH, Sorokin LM, Mosina GN, Savkina NS, Shuman VB, Lebedev AA Materials Science Forum, 457-460, 363, 2004 |
| 5 |
Structural transformation of dislocated micropipes in silicon carbide Gutkin MY, Sheinerman AG, Argunova TS, Mokhov EN, Je JH, Hwu Y, Tsai WL Materials Science Forum, 457-460, 367, 2004 |
| 6 |
High quality SiC substrates for semiconductor devices: From research to industrial production Muller SG, Brady MF, Brixius WH, Fechko G, Glass RC, Henshall D, Hobgood HM, Jenny JR, Leonard R, Malta D, Powell A, Tsvetkov VF, Allen S, Palmour J, Carter CH Materials Science Forum, 389-3, 23, 2002 |
| 7 |
Growth and defect reduction of bulk SiC crystals Ohtani N, Fujimoto T, Katsuno M, Aigo T, Yashiro H Materials Science Forum, 389-3, 29, 2002 |
| 8 |
Growth of 3-inch diameter 6H-SiC single crystals by sublimation physical vapor transport Wang S, Sanchez EK, Kopec A, Poplawski S, Ware R, Holmes S, Balkas CM, Timmerman AG Materials Science Forum, 389-3, 35, 2002 |
| 9 |
The nucleation of polytype inclusions during the sublimation growth of 6H and 4H silicon carbide Sanchez EK, Kopec A, Poplawski S, Ware R, Holmes S, Wang S, Timmerman A Materials Science Forum, 389-3, 71, 2002 |
| 10 |
Observation of planar defects in 2-inch SiC wafer Tanaka H, Nishiguchi T, Sasaki M, Nishino S Materials Science Forum, 389-3, 79, 2002 |