| 1 |
Leakage current suppression in spatially controlled Si-doped ZrO2 for capacitors using atomic layer deposition
Lee K, Jang W, Kim H, Lim H, Kim B, Seo H, Jeon H
Thin Solid Films, 657, 1, 2018 |
| 2 |
Investigation of ultrathin Pt/ZrO2-Al2O3-ZrO2/TiN DRAM capacitors Schottky barrier height by internal photoemission spectroscopy
Lee SY, Chang J, Choi J, Kim Y, Lim H, Jeon H, Seo H
Current Applied Physics, 17(2), 267, 2017 |
| 3 |
Effect of annealing on the electrical properties of insulating aluminum nitride in MIM and MIS structures
Ortiz CR, Pantojas VM, Otano-Rivera W
Solid-State Electronics, 91, 106, 2014 |
| 4 |
Modeling the voltage nonlinearity of high-k MIM capacitors
Kannadassan D, Karthik R, Baghini MS, Mallick PS
Solid-State Electronics, 91, 112, 2014 |
| 5 |
Growth, dielectric properties, and memory device applications of ZrO2 thin films
Panda D, Tseng TY
Thin Solid Films, 531, 1, 2013 |
| 6 |
Enhanced leakage current behavior of Sr2Ta2O7-x/SrTiO3 bilayer dielectrics for metal-insulator-metal capacitors
Kaynak CB, Lukosius M, Costina I, Tillack B, Wenger C, Ruhl G, Blomberg T
Thin Solid Films, 519(17), 5734, 2011 |
| 7 |
Effect of UV lamp irradiation during oxidation of Zr/Pt/Si structure on electrical properties of Pt/ZrO2/Pt/Si structure
Bae JW, Lim JW, Mimura K, Uchikoshi M, Miyazaki T, Isshiki M
Applied Surface Science, 256(11), 3518, 2010 |
| 8 |
The role of the HfO2-TiN interface in capacitance-voltage nonlinearity of Metal-Insulator-Metal capacitors
Wenger C, Lukosius M, Weidner G, Mussig HJ, Pasko S, Lohe C
Thin Solid Films, 517(23), 6334, 2009 |
| 9 |
TiN 기판 위에 성장시킨 비정질 BaSm2Ti4O12 박막의 구조 및 전기적 특성 연구
박용준, 백종후, 이영진, 정영훈, 남산
Korean Journal of Materials Research, 18(4), 169, 2008 |
| 10 |
Ion beam sputter deposited TiAlN films for metal-insulator-metal (Ba,Sr)TiO3 capacitor application
Lee SY, Wang SC, Chen JS, Huang JL
Thin Solid Films, 516(21), 7816, 2008 |
