화학공학소재연구정보센터
검색결과 : 20건
No. Article
1 Interfacial influence on electrical injection and transport characterization of CoFeB vertical bar MgO vertical bar GaAs-InGaAs quantum wells hetero-structure
Tian Y, Zhang C, Xiao C, Wang R, Xu L, Devaux X, Renucci P, Xu B, Liang S, Yang C, Lu Y
Applied Surface Science, 473, 230, 2019
2 Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p(+)-Si memory device
Kim TH, Kim S, Kim H, Kim MH, Bang S, Cho S, Park BG
Solid-State Electronics, 140, 51, 2018
3 Metal-insulator-SiC Schottky structures using HfO2 and TiO2 dielectrics
Kaufmann IR, Pick A, Pereira MB, Boudinov H
Thin Solid Films, 621, 184, 2017
4 Ultra-thin CdS for highly performing chalcogenides thin film based solar cells
Sanchez Y, Espindola-Rodriguez M, Xie H, Lopez-Marino S, Neuschitzer M, Giraldo S, Dimitrievska M, Placidi M, Izquierdo-Roca V, Pulgarin-Agudelo PA, Vigil-Galan O, Saucedo E
Solar Energy Materials and Solar Cells, 158, 138, 2016
5 TCAD simulation of tunneling leakage current in CaF2/Si(111) MIS structures
Illarionov YY, Vexler MI, Karner M, Tyaginov SE, Cervenka J, Grasser T
Current Applied Physics, 15(2), 78, 2015
6 A wire-form emitter metal-insulator-semiconductor tunnel junction
Vexler MI
Current Applied Physics, 14(3), 306, 2014
7 Low energy hydrogen sensor
Linke S, Dallmer M, Werner R, Moritz W
International Journal of Hydrogen Energy, 37(22), 17523, 2012
8 Electrical characteristics of insulating aluminum nitride MIS nanostructures
Abdallah B, Al-Khawaja S, Alkhawwam A
Applied Surface Science, 258(1), 419, 2011
9 Inter-diffusion of cobalt and silicon through an ultra thin aluminum oxide layer
El Asri T, Raissi M, Vizzini S, El Maachi A, Ameziane EL, d'Avitaya FA, Lazzari JL, Coudreau C, Oughaddou H, Aufray B, Kaddouri A
Applied Surface Science, 256(9), 2731, 2010
10 Simulation of hole and electron tunnel currents in MIS devices adopting the symmetric Franz-type dispersion relation for the charged carriers in thin insulators
Vexler MI, Kuligk A, Meinerzhagen B
Solid-State Electronics, 53(3), 364, 2009